SiSS05DN - P-Channel MOSFET

Vishay

Datasheet Details

TrenchFET® Gen IV p-channel power MOSFET.
Provides exceptionally low RDS(on) in a compact package that is thermally enhanced.
Enables higher power density.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 SiSS05DN Similar Datasheet

SISS27DN-T1-GE3 - 30V P-Channel MOSFET (Kexin)
SIS0100 - Black and White Image Sensor Camera Module (Sanyo Semicon Device)
SiS1057 - JFET Operational Amplifier (Silicon Supplies)
SIS23C128 - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
SIS23C128A - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
SIS23C256 - CMOS MASK ROM (ETC)
SIS23C256A - CMOS MASK ROM (ETC)
SIS23C32 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)

Other Datasheets by Vishay

Published: Apr 27, 2020 |