SiSS10DN - N-Channel MOSFET
SiSS10DN Features
* TrenchFET® Gen IV power MOSFET
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Synchronous rect
