* TrenchFET® Gen IV power MOSFET
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Synchronous rect
SiSS10DN Datasheet (305.36 KB)
SiSS10DN
305.36 KB
N-channel mosfet.
www.vishay.com
SiSS10DN
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 .
📁 Related Datasheet
SiSS10ADN - N-Channel MOSFET
(Vishay)
.
SiSS12DN - N-Channel MOSFET
(Vishay)
.vishay.
SiSS12DN
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PowerPAK® 1212-8S D
D
D 6
D 7
8
5
3.3 mm
1 Top View
3.3 mm
PRODUCT SU.
SiSS178LDN - N-Channel MOSFET
(Vishay)
.vishay.
SiSS178LDN
Vishay Siliconix
N-Channel 70 V (D-S) MOSFET
PowerPAK® 1212-8S D
D
D 6
D 7
8
5
3.3 mm
1 Top View
3.3 mm
PRODUCT .
SiSS05DN - P-Channel MOSFET
(Vishay)
.vishay.
SiSS05DN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PowerPAK® 1212-8S
D
D
D 6
7
5
D 8
3.3 mm
1 Top View
3.3 mm
PRODUCT S.
SiSS23DN - P-Channel 20V (D-S) MOSFET
(Vishay)
P-Channel 20 V (D-S) MOSFET
SiSS23DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0045 at VGS = - 4.5 V
- 20 0.0063 at VGS = - 2..
SiSS27ADN - P-Channel 30V (D-S) MOSFET
(Vishay)
.vishay.
SiSS27ADN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PowerPAK® 1212-8S
D
D
D 6
7
5
D 8
3.3 mm
1 Top View
3.3 mm
PRODUCT .
SiSS27DN - P-Channel 30 V (D-S) MOSFET
(Vishay)
P-Channel 30 V (D-S) MOSFET
SiSS27DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0056 at VGS = - 10 V
- 30 0.0070 at VGS = - 6 V.
SISS27DN-T1-GE3 - 30V P-Channel MOSFET
(Kexin)
SMD Type
SISS27DN-T1-GE3
MOSFET
30V P-Channel MOSFET
General Description
Product Summary
The SISS27DN uses advanced trench technology to provide.
