* TrenchFET® Gen IV power MOSFET
* Very low RDS(on) in a compact and thermally enhanced package
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance pleas
SiSS12DN Datasheet (308.11 KB)
SiSS12DN
308.11 KB
N-channel mosfet.
www.vishay.com
SiSS12DN
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PowerPAK® 1212-8S D
D
D 6
D 7
8
5
3.3 mm
1 Top View
3.3 mm
PRODUCT SU.
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The SISS27DN uses advanced trench technology to provide.
