SiSS12DN - N-Channel MOSFET

Vishay

Datasheet Details

TrenchFET® Gen IV power MOSFET.
Very low RDS(on) in a compact and thermally enhanced package.
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Sep 6, 2022 |