SiSS06DN - N-Channel 30V MOSFET
SiSS06DN Features
* TrenchFET® Gen IV power MOSFET
* Very low RDS(on) in a compact and thermally enhanced package
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance pleas
