Datasheet4U.com

V20100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

📥 Download Datasheet

V20100S Datasheet Preview — Preview of V20100S PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	V20100S
Manufacturer	Vishay ↗
File Size	140.90 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20100S_Vishay.pdf

V20100S Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📁 V20100S Similar Datasheet

V201B1-L01 - TFt LCD (CHI MEI)
V201B1-L02 - TFT LCD Module (Chi Mei)
V201B1-L03 - LCD Module (CHI MEI)
V201HA32 - Varistor (Littelfuse)
V201HA40 - Varistor (Littelfuse)
V201V1-P01 - TFT LCD Module (CHI MEI)
V201V1-T01 - LCD_Module (CHIMEI)
V201V1-T02 - TFT LCD (CHI MEI)

Other Datasheets by Vishay

V20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
V20100SG - High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Published: Feb 2, 2012 |