* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
V20100S-E3 Datasheet (212.08 KB)
V20100S-E3
212.08 KB
High voltage trench mos barrier schottky rectifier.
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ul.
📁 Related Datasheet
V20100S - High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
.vishay.
V20100S, VI20100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.446 V at IF = 5 A
.
V20100SG - High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
V20100SG, VF20100SG, VB20100SG, VI20100SG
.vishay.
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low .
V20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
.vishay.
V20100C, VF20100C, VB20100C, VI20100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low .
V20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
.vishay.
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifi.
V20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF.
V20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
.vishay.
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifi.
V20120S - High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
.vishay.
V20120S, VI20120S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
.
V20120S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3
.vishay.
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ul.
