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V20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	V20100S-E3
Manufacturer	Vishay ↗
File Size	212.08 KB
Description	High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20100S-E3-Vishay.pdf

V20100S-E3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).

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Published: Jun 4, 2019 |