V20120C Datasheet - Vishay

V20120C, Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF.

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Datasheet Details

Part number:

V20120C

Manufacturer:

Vishay ↗

File Size:

139.12 KB

Description:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 2 3 VI20120C 2 V20120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF20120C PIN 1 PIN 3 PIN 2 2 3 1 TO-263AB K K TO-262AA 2 1 VB20120C PIN 1 PIN 2 K HEATSIN

V20120C Distributors

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V20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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