V20120S Datasheet - Vishay

V20120S High-Voltage Trench MOS Barrier Schottky Rectifier

V20120S Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Datasheet Details

V20120S

138.43 KB

High-voltage trench mos barrier schottky rectifier.

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