Datasheet4U.com

V20120S - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

📥 Download Datasheet

V20120S Datasheet Preview — Preview of V20120S PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	V20120S
Manufacturer	Vishay ↗
File Size	138.43 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20120S_Vishay.pdf

V20120S Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 V20120S Similar Datasheet

V201B1-L01 - TFt LCD (CHI MEI)
V201B1-L02 - TFT LCD Module (Chi Mei)
V201B1-L03 - LCD Module (CHI MEI)
V201HA32 - Varistor (Littelfuse)
V201HA40 - Varistor (Littelfuse)
V201V1-P01 - TFT LCD Module (CHI MEI)
V201V1-T01 - LCD_Module (CHIMEI)
V201V1-T02 - TFT LCD (CHI MEI)

Other Datasheets by Vishay

V20120S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
V20120SG - High-Voltage Trench MOS Barrier Schottky Rectifier
V20120SG-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
V20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Published: Feb 2, 2012 |