Part number:
V20120C-E3
Manufacturer:
File Size:
216.79 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
Datasheet Details
V20120C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
Datasheet Details
V20120C-E3
216.79 KB
Dual high voltage trench mos barrier schottky rectifier.
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V20120C-E3 Distributor