Part number:
V20120SG-E3
Manufacturer:
File Size:
213.68 KB
Description:
High voltage trench mos barrier schottky rectifier.
Datasheet Details
Part number:
V20120SG-E3
Manufacturer:
File Size:
213.68 KB
Description:
High voltage trench mos barrier schottky rectifier.
V20120SG-E3, High Voltage Trench MOS Barrier Schottky Rectifier
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20120SG 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20120SG NC K A HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20120SG 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV
V20120SG-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
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