V20120SG-E3 Datasheet (Vishay) - High Voltage Trench MOS Barrier Schottky Rectifier

V20120SG-E3, High Voltage Trench MOS Barrier Schottky Rectifier

V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20120SG 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20120SG NC K A HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20120SG 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV

V20120SG-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for