V20120SG-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V20120SG-E3
Manufacturer	Vishay ↗
File Size	213.68 KB
Description	High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20120SG-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 V20120SG-E3 Similar Datasheet

Other Datasheets by Vishay

Published: May 4, 2020 |