* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
V20120SG Datasheet (134.93 KB)
V20120SG
134.93 KB
High-voltage trench mos barrier schottky rectifier.
www.vishay.com
V20120SG, VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A.
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