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V20120SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	V20120SG
Manufacturer	Vishay ↗
File Size	134.93 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20120SG_Vishay.pdf

V20120SG Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 2, 2012 |