V20200C-E3 Datasheet - Vishay

V20200C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20200C 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20200C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 3 VI20200C 2 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERIST.

V20200C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C max

V20200C-E3 Datasheet (212.50 KB)