* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
V20200G-E3 Datasheet (209.15 KB)
V20200G-E3
209.15 KB
Dual high voltage trench mos barrier schottky rectifier.
V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.
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