V20200G Datasheet - Vishay

V20200G Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V20200G Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C max

Datasheet Details

V20200G

217.62 KB

Dual high-voltage trench mos barrier schottky rectifier.

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