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V20DM120 Datasheet - Vishay

V20DM120 Trench MOS Barrier Schottky Rectifier

V20DM120 Features

* Trench MOS Schottky technology generation 2 Available

* Very low profile - typical height of 1.7 mm

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximu

Datasheet Details

V20DM120

118.49 KB

Trench mos barrier schottky rectifier.

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V20DM120 Trench MOS Barrier Schottky Rectifier Vishay

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