Description
www.vishay.com V20DM120C-M3, V20DM120CHM3 Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at I.
Features
* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
120 V
IFSM
120 A
VF at IF = 10 A (TA = 125 °C) TJ max.
