V20DM120C Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A eSMP® Se.

📥 Download Datasheet

V20DM120C Datasheet Preview — Preview of V20DM120C PDF

Datasheet Specifications

Part number: V20DM120C
Manufacturer: Vishay ↗
File Size: 122.77 KB
Datasheet: V20DM120C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) VRRM 2 x 10 A 120 V IFSM 120 A VF at IF = 10 A (TA = 125 °C) TJ max. Pac

V20DM120C Distributors

📁 Related Datasheet

V2000 V200CH8 V200ME01-LF V200ME07-LF V200ML01 V200O1-P01

📌 All Tags

V20DM120C Trench MOS Barrier Schottky Rectifier Vishay

Vishay V20DM120C-like datasheet