V20DM120C-M3 Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V20DM120C-M3, V20DM120CHM3 Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at I.

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Datasheet Specifications

Part number: V20DM120C-M3
Manufacturer: Vishay ↗
File Size: 115.83 KB
Datasheet: V20DM120C-M3-Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A (TA = 125 °C) TJ max.

V20DM120C-M3 Distributors

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V20DM120C-M3 Dual Trench MOS Barrier Schottky Rectifier Vishay

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