V30100C Datasheet - Vishay

V30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V30100C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Material categorization: for definitions of compliance please see www.v

Datasheet Details

V30100C

133.72 KB

Dual high-voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

V30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30100PW-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30120CI Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

V30100C Distributor