* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN
V30100PW-M3 Datasheet (82.22 KB)
V30100PW-M3
82.22 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V30100PW-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A T.
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