V30120S - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Datasheet Details

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Jan 30, 2007 |