Part number:
V30120C-E3
Manufacturer:
File Size:
214.00 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
V30120C-E3 Datasheet (214.00 KB)
Datasheet Details
V30120C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
V30120C-E3 Datasheet (214.00 KB)
Datasheet Details
V30120C-E3
214.00 KB
Dual high voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
V30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30120CI Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30120SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100PW-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30120C-E3 Distributor
