V30120SG Datasheet - Vishay

V30120SG High-Voltage Trench MOS Barrier Schottky Rectifier

V30120SG Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V30120SG PIN 1 PIN 2 CASE 3 1 VF30120SG PIN 1 PIN 2 2 3 1

* S

Datasheet Details

V30120SG

212.06 KB

High-voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

V30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

V30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30120CI Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

V30100PW-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

V30120SG Distributor