* TMBS®
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 3 2 1
* Low thermal resistance
* Solder dip 260 °C, 40 s
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICAT
V80100P
165.72 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V80100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V.
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