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V80100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Description

www.DataSheet.co.kr New Product V80100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V.

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Datasheet Specifications

Part number
V80100PW
Manufacturer
Vishay ↗
File Size
141.52 KB
Datasheet
V80100PW_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halogen-free accor

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS at L = 180 mH VF at IF = 40 A TJ max. 2 x 40 A 100 V 450 A 700 mJ 0.64 V 150 °C MECHANICAL DATA Case:

V80100PW Distributors

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay V80100PW-like datasheet