Datasheet4U.com

V80170PW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

📥 Download Datasheet

V80170PW Datasheet Preview — Preview of V80170PW PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	V80170PW
Manufacturer	Vishay ↗
File Size	86.92 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V80170PW-Vishay.pdf

V80170PW Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE.

📁 V80170PW Similar Datasheet

V801ME01 - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR (Z-Communications)
V801ME01-LF - Voltage-Controlled Oscillator Surface Mount Module (Z-Communications)
V8001DR - VDSL SPLITTER (GROUP-TEK)
V800ME04 - OSCILLATOR (Z-Communications)
V800ME04-LF - OSCILLATOR (Z-Communications)
V800ME05 - VOLTAGE CONTROLLED OSCILLATOR (ETC)
V800ME05-LF - OSCILLATOR (Z-Communications)
V800ME06 - VOLTAGE CONTROLLED OSCILLATOR (ETC)

Other Datasheets by Vishay

V80100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V80100PW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Published: Apr 29, 2016 |