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V80170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Description

www.vishay.com V80170PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A TMB.

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Datasheet Specifications

Part number
V80170PW
Manufacturer
Vishay ↗
File Size
86.92 KB
Datasheet
V80170PW-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TJ max. 2 x 40 A 170 V 280 A 0.68 V 175 °C MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V

V80170PW Distributors

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay V80170PW-like datasheet