* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN
V80170PW
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Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V80170PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A TMB.
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