* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VB20200C Datasheet (150.73 KB)
VB20200C
150.73 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V20200C, VF20200C, VB20200C, VI20200C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .
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