VE2045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VE2045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMB.

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Datasheet Specifications

Part number: VE2045C-E3
Manufacturer: Vishay ↗
File Size: 118.04 KB
Datasheet: VE2045C-E3-Vishay.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Power pack
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/do

Applications

* For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A (TA = 125 °C) TJ max. Package 2 x 10 A 45 V 100 A 0.54 V 150 °C TO-220AB Diode variat

VE2045C-E3 Distributors

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VE2045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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