VE2045C-E3 Datasheet, Rectifier, Vishay

✔ VE2045C-E3 Features

Power pack
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
M

✔ VE2045C-E3 Application

For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC con

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VE2045C-E3

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📄 Datasheet

Description:

Dual low-voltage trench mos barrier schottky rectifier.

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Vishay Semiconductors

DIODE ARR SCHOTT 45V 10A TO2203

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VE2045C-E3-45

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VE2045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay