* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 123 VF30100
VF30100S
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High-voltage trench mos barrier schottky rectifier.
www.vishay.com
VF30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
IT.
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