* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VF30120C-E3 Datasheet (201.92 KB)
VF30120C-E3
201.92 KB
Dual high voltage trench mos barrier schottky rectifier.
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
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Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifi.
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