* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V30120SG PIN 1 PIN 2 CASE 3 1 VF30120SG PIN 1 PIN 2 2 3 1
* S
VF30120SG Datasheet (212.05 KB)
VF30120SG
212.05 KB
High-voltage trench mos barrier schottky rectifier.
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New Product
V30120SG, VF30120SG, VB30120SG, VI30120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rec.
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