VF30M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

New Product VF30M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky R.

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Datasheet Specifications

Part number: VF30M120C
Manufacturer: Vishay ↗
File Size: 672.33 KB
Datasheet: VF30M120C_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 120 V 150 A 0.68 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94

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VF30M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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