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VF40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Description

www.vishay.com VF40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TMBS.

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Datasheet Specifications

Part number
VF40100C
Manufacturer
Vishay ↗
File Size
132.89 KB
Datasheet
VF40100C-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Solder dip 275 °C max. , 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - haloge

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