* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Solder dip 275 °C max., 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.
VF40100C Datasheet (132.89 KB)
VF40100C
132.89 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com
VF40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TMBS.
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