VF40100C-E3 Datasheet (Vishay) - Dual High Voltage Trench MOS Barrier Schottky Rectifier

VF40100C-E3, Dual High Voltage Trench MOS Barrier Schottky Rectifier

V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS® ITO-220AB V40100C PIN 1 3 2 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF40100C PIN 1 123 PIN 2 PIN 3 TO-262AA K 2 1 VB40100C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS VI40100C PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(A

VF40100C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Low thermal resistance

* Solder bath temperature 275 °C max