VF40100G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VF40100G-E3
Manufacturer	Vishay ↗
File Size	145.59 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VF40100G-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-263AB K TO-262AA.

📁 VF40100G-E3 Similar Datasheet

VF40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VF401 - 2-Wire MR Fine Pitch Ring Magnet Sensor (Honeywell)
VF40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VF4-15H11 - (VF4 Series) 40 Amp Relay (Siemens)
VF4-xxxx - (VF4 Series) 40 Amp Relay (Siemens)
VF45A1M - SAW filter (SHOULDER ELECTRONICS)
VF45A2M - SAW filter (HAODA ELECTRONICS)
VF460S - High Sensitivity Latching Digital Hall-effect Sensor (Honeywell)

Other Datasheets by Vishay

Published: May 3, 2016 |