* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog
VF40M120C Datasheet (668.91 KB)
VF40M120C
668.91 KB
Dual high-voltage trench mos barrier schottky rectifier.
New Product
VF40M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.46 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky R.
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