VS-3C02EJ07-M3 - 2A 650V Gen3 Power SiC Merged PIN Schottky Diode
/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.
Optimized for extreme high-speed hard switching over a wide temperature range.
It is suited for demanding applications, such as bootstrap and anti-parallel diodes in AC/DC and DC/DC converters.
VS-3C02EJ07-M3 Features
* Minimum creepage distance 3.2 mm guaranteed by design
* Comparative Tracking Index: CTI 600
* High CTI molding compound provides excellent electrical insulation at relevant working voltages
* Positive VF temperature coefficient for easy paralleling
* Virtu
