VS-3C02EJ07-M3 Datasheet - Vishay

VS-3C02EJ07-M3 2A 650V Gen3 Power SiC Merged PIN Schottky Diode

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimized for extreme high-speed hard switching over a wide temperature range. It is suited for demanding applications, such as bootstrap and anti-parallel diodes in AC/DC and DC/DC converters..

VS-3C02EJ07-M3 Features

* Minimum creepage distance 3.2 mm guaranteed by design

* Comparative Tracking Index: CTI  600

* High CTI molding compound provides excellent electrical insulation at relevant working voltages

* Positive VF temperature coefficient for easy paralleling

* Virtu

VS-3C02EJ07-M3-Vishay.pdf