VS-3C10ET07T-M3 Datasheet, Diode, Vishay

VS-3C10ET07T-M3 Features

• Diode
• Majority carrier diode using Schottky technology on SiC wide band gap material
• Improved VF and efficiency by thin wafer technology
• Positive VF temperature

PDF File Details

Part number:

VS-3C10ET07T-M3

Manufacturer:

Vishay ↗

File Size:

141.90kb

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📄 Datasheet

Description:

650v power sic gen 3 merged pin schottky diode. / APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high sp

VS-3C10ET07T-M3 Application

• Applications Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switchin

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