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VS-3C10ET07T-M3 Datasheet - Vishay

VS-3C10ET07T-M3 - 650V Power SiC Gen 3 Merged PIN Schottky Diode

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.

Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavio

VS-3C10ET07T-M3 Features

* Majority carrier diode using Schottky technology on SiC wide band gap material

* Improved VF and efficiency by thin wafer technology

* Positive VF temperature coefficient for easy paralleling

* Virtually no recovery tail and no switching losses

* Temperature

VS-3C10ET07T-M3-Vishay.pdf

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Datasheet Details

Part number:

VS-3C10ET07T-M3

Manufacturer:

Vishay ↗

File Size:

141.90 KB

Description:

650v power sic gen 3 merged pin schottky diode.

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