* Majority carrier diode using Schottky technology on SiC wide band gap material
* Improved VF and efficiency by thin wafer technology
* Positive VF temperature coefficient for easy paralleling
* Virtually no recovery tail and no switching losses
* Temperature
VS-3C10ET07T-M3 Datasheet (141.90 KB)
VS-3C10ET07T-M3
141.90 KB
650v power sic gen 3 merged pin schottky diode.
www.vishay.com
VS-3C10ET07T-M3
Vishay Semiconductors
650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A
Base cathode 2
2
1 3
TO-220AC 2L
1 Ca.
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