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VS-3C12ET07S2L-M3

650V Gen 3 Power SiC Merged PIN Schottky Diode

VS-3C12ET07S2L-M3 Features

* Majority carrier diode using Schottky technology on SiC wide band gap material

* Improved VF and efficiency by thin wafer technology

* Positive VF temperature coefficient for easy paralleling

* Virtually no recovery tail and no switching losses

* Temperature

VS-3C12ET07S2L-M3 General Description

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavio.

VS-3C12ET07S2L-M3 Datasheet (182.41 KB)

Preview of VS-3C12ET07S2L-M3 PDF

Datasheet Details

Part number:

VS-3C12ET07S2L-M3

Manufacturer:

Vishay ↗

File Size:

182.41 KB

Description:

650v gen 3 power sic merged pin schottky diode.
www.vishay.com VS-3C12ET07S2L-M3 Vishay Semiconductors 650 V Gen 3 Power SiC Merged PIN Schottky Diode, 12 A Base cathode 4 4 D2PAK 2L (TO-263A.

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VS-3C12ET07S2L-M3 650V Gen Power SiC Merged PIN Schottky Diode Vishay

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