VS-3C12ET07S2L-M3 - 650V Gen 3 Power SiC Merged PIN Schottky Diode
/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavio
VS-3C12ET07S2L-M3 Features
* Majority carrier diode using Schottky technology on SiC wide band gap material
* Improved VF and efficiency by thin wafer technology
* Positive VF temperature coefficient for easy paralleling
* Virtually no recovery tail and no switching losses
* Temperature
