Description
/ APPLICATIONS
Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior.Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.MECHANICAL DATA
Case: D2PAK 2L (TO-263AB 2L) Molding compound meets UL 94 V-0
Features
- Majority carrier diode using Schottky technology on SiC wide band gap material.
- Improved VF and efficiency by thin wafer technology.
- Positive VF temperature coefficient for easy paralleling.
- Virtually no recovery tail and no switching losses.
- Temperature invariant switching behavior.
- 175 °C maximum operating junction temperature.
- Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C.
- MPS structure for high ruggedness.
VS-3C12ET07S2L-M3-Vishay.pdf
