VS-3C12ET07S2L-M3 Datasheet - Vishay

VS-3C12ET07S2L-M3 650V Gen 3 Power SiC Merged PIN Schottky Diode

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavio.

VS-3C12ET07S2L-M3 Features

* Majority carrier diode using Schottky technology on SiC wide band gap material

* Improved VF and efficiency by thin wafer technology

* Positive VF temperature coefficient for easy paralleling

* Virtually no recovery tail and no switching losses

* Temperature

VS-3C12ET07S2L-M3-Vishay.pdf