* NPT Gen 5 IGBT technology
* Square RBSOA
* HEXFRED® low Qrr, low switching energy
* Positive VCE(on) temperature coefficient
* Fully isolated package
* Very low internal inductance ( 5 nH typical)
* Industry standard outline
* UL app
VS-GB90DA120U Datasheet (199.69 KB)
VS-GB90DA120U
199.69 KB
Igbt.
www.vishay.com VS-GB90DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A SOT-227 PRIMARY CHARACTERISTICS VCES .
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