* NPT Gen 5 IGBT technology
* Square RBSOA
* Positive VCE(on) temperature coefficient
* Fully isolated package
* Speed 8 kHz to 60 kHz
* Very low internal inductance ( 5 nH typical)
* Industry standard outline
* UL approved file E78996
VS-GB90SA120U Datasheet (172.48 KB)
VS-GB90SA120U
172.48 KB
Igbt.
www.vishay.com VS-GB90SA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A SOT-227 PRIMARY CHARACTERISTICS VCES .
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