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SI4392DY N-Channel MOSFET

SI4392DY Description

Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.00975 at VGS = 10 V 0.01375 at VGS =.

SI4392DY Features

* Extremely Low Qgd for Low Switching Losses
* TrenchFET® Power MOSFET Available
* 100 % Rg Tested RoHS

SI4392DY Applications

* High-Side DC/DC Conversion - Notebook - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)a Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diod

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N-Channel MOSFET Vishay Siliconix
Vishay Siliconix SI4392DY-like datasheet