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SI4966DY - Dual N-Channel MOSFET

SI4966DY Description

Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V ID (.

SI4966DY Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (

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Dual N-Channel MOSFET Vishay Siliconix
Vishay Siliconix SI4966DY-like datasheet