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BC847S Datasheet - WILLAS

BC847S NPN Transistor

BC847S Features

* Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter NCollector-

BC847S-WILLAS.pdf

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Datasheet Details

Part number:

BC847S

Manufacturer:

WILLAS

File Size:

241.42 KB

Description:

Npn transistor.

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