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WFF13N50

Silicon N-Channel MOSFET

WFF13N50 Features

* 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This

WFF13N50 General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, .

WFF13N50 Datasheet (215.54 KB)

Preview of WFF13N50 PDF

Datasheet Details

Part number:

WFF13N50

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

215.54 KB

Description:

Silicon n-channel mosfet.

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WFF13N50 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR

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