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WFW18N50

Silicon N-Channel MOSFET

WFW18N50 Features

* 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect transistors are p

WFW18N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in .

WFW18N50 Datasheet (344.89 KB)

Preview of WFW18N50 PDF

Datasheet Details

Part number:

WFW18N50

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

344.89 KB

Description:

Silicon n-channel mosfet.

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WFW18N50 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR

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