Part number:
WFW20N60W
Manufacturer:
Winsemi
File Size:
340.55 KB
Description:
Silicon n-channel mosfet.
* 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this
WFW20N60W Datasheet (340.55 KB)
WFW20N60W
Winsemi
340.55 KB
Silicon n-channel mosfet.
📁 Related Datasheet
WFW20N60 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFW20N60
N-Channel MOSFET
Features
■ RDS(on) (Typical 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 80nC) ■ Improved dv/dt Capabilit.
WFW20N50 - N-Channel MOSFET
(Wisdom)
Wisdom Semiconductor
WFW20N50
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capabilit.
WFW24N50W - Silicon N-Channel MOSFET
(Winsemi)
Features
■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junct.
WFW24N60 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFW24N60
N-Channel MOSFET
Features
■ RDS(on) (Typical 0.22 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capabilit.
WFW28N60 - N-Channel MOSFET
(Wisdom technologies)
PROVISIONAL
Wisdom Semiconductor
WFW28N60
Features
■ RDS(on) (Max 0.22 Ω )@VGS=10V ■ Gate Charge (Typical 120nC) ■ Improved dv/dt Capability, High R.
WFW10N80 - N-Channel MOSFET
(Wisdom technologies)
PROVISIONAL
Wisdom Semiconductor
WFW10N80
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Cap.
WFW11N90 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFW11N90
Features
■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 10.
WFW13N50 - Silicon N-Channel MOSFET
(Winsemi)
Datasheet pdf - http://..net/
.DataSheet.co.kr
13N5 0 WFW FW13N5 13N50
con N-Ch annel MOS FET Sili lic Cha OSF
Features
■ 13A,500V,.