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WFW9N90W

Silicon N-Channel MOSFET

WFW9N90W Features

* 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V

* Ultra-low Gate charge(Typical 58nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi'

WFW9N90W General Description

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.

WFW9N90W Datasheet (599.54 KB)

Preview of WFW9N90W PDF

Datasheet Details

Part number:

WFW9N90W

Manufacturer:

Winsemi

File Size:

599.54 KB

Description:

Silicon n-channel mosfet.

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TAGS

WFW9N90W Silicon N-Channel MOSFET Winsemi

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