AG302-63
WJ Communication
583.76kb
Ingap hbt gain block.
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AG302-63 - InGaP HBT Gain Block
(TriQuint Semiconductor)
AG302-63
InGaP HBT Gain Block
Product Features
Product Description
Functional Diagram
• DC – 6000 MHz • 15.5 dB Gain @ 900 MHz • +13.5 dBm P1dB @ .
AG302-86 - InGaP HBT Gain Block
(TriQuint Semiconductor)
AG302-86
InGaP HBT Gain Block
Product Features
• DC – 6000 MHz • 15.5 dB Gain @ 900 MHz • +13.5 dBm P1dB @ 900 MHz • +26 dBm OIP3@ 900 MHz • Single V.
AG302 - InGaP HBT Gain Block
(WJ Communications)
AG302
InGaP HBT Gain Block
The Communications Edge TM Preliminary Product Information
Product Features
Product Description
Functional Diagram
• D.
AG3011-77C - Encapsulated Tilt Switch
(COMUS)
Group
Part Number: AG3011-77C (Alternate Part No: S1016CW) Encapsulated Tilt Switch Product Data Sheet
PICTURE
OPERATION
MAKE HORIZONTAL
15° MAX .
AG303 - InGaP HBT Gain Block
(WJ Communications)
AG303
InGaP HBT Gain Block
The Communications Edge TM Preliminary Product Information
Product Features
Product Description
Functional Diagram
• D.
AG303-63 - InGaP HBT Gain Block
(TriQuint Semiconductor)
AG303-63
InGaP HBT Gain Block
Product Features
• DC – 6000 MHz • 20.5 dB Gain @ 900 MHz • +14 dBm P1dB @ 900 MHz • +26 dBm OIP3 @ 900 MHz • Single Vo.
AG303-63 - InGaP HBT Gain Block
(WJ Communication)
..
AG303-63
InGaP HBT Gain Block
The Communications Edge TM Product Information
Product Features
• • • • • • DC – 6000 MHz +14 dBm.
AG303-86 - InGaP HBT Gain Block
(TriQuint Semiconductor)
AG303-86
InGaP HBT Gain Block
Product Features
• DC – 6000 MHz • 20.5 dB Gain @ 900 MHz • +14 dBm P1dB @ 900 MHz • +26 dBm OIP3 @ 900 MHz • Single Vo.
AG3A - Silicon Rectifier Cells with polysiloxan passivation
(Diotec Semiconductor)
AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung
Nominal current – Nennstr.
AG3B - Silicon Rectifier Cells with polysiloxan passivation
(Diotec Semiconductor)
AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung
Nominal current – Nennstr.
