WTC2301 Datasheet - Weitron Technology

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WTC2301 Enhancement Mode Power MOSFET

WTC2301 P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE .

WTC2301_WeitronTechnology.pdf

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Datasheet Details

Part number:

WTC2301

Manufacturer:

Weitron Technology

File Size:

572.81 KB

Description:

Enhancement Mode Power MOSFET

Features

* Super High Dense Cell Design For Low R DS(ON) R DS(ON)

Applications

* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θ JA R θJC Ta Tc TJ T st

WTC2301 Distributors

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WTC2301 Enhancement Mode Power MOSFET Weitron Technology

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